data sheet 1 1999-04-01 n not for new design the position sensor ksy 10 is an ion-implanted hall generator made of mono-crystalline gaas material. it is enclosed in a tubular plastic package with four tags. when operating the sensor with a constant supply current, the output hall voltage is directly proportional to the magnetic field acting upon the sensor. this sensor is outstanding for its high inductive sensitivity and very low temperature coefficient. type ordering code n ksy 10 q62705-k38 hall sensor ksy 10 version 2.0 dimensions in mm features ? high sensitivity ? high operating temperature range ? high linearity ? low offset voltage ? low tc of sensitivity and internal resistance ? plastic-encapsulated miniature package typical applications ? detection of speed ? detection of position ? detection of diaphragm position in pressure pickup cans ? magnetic field measurement at permanent magnets ? magnetic field measurement at magnetic yokes for current determination ? magnetic field measurement in dc motors for contactless commutation
data sheet 2 1999-04-01 ksy 10 the hall sensors active area is approx. 0.2 mm 0.2 mm. it is placed approx. 0.35 mm below the plastic surface of the front side and is concentric towards the adjusting marking on the rear. the chip carrier is non-magnetic. the position sensor ksy 10 is particularly suitable for sensing the position of magnets and of softmagnetic material, resp., if the sensor itself is mounted on a magnet. absolute maximum ratings electrical characteristics ( t a = 25 c) parameter symbol limit values unit operating temperature t a C 40 / + 150 c storage temperature t stg C 50 / + 160 c supply current i 1 7ma thermal conductivity 1) g th a 3 2.8 mw/k nominal supply current i 1n 5ma open-circuit sensitivity k b0 170 ? 230 v/at open-circuit hall voltage i 1 = i 1n , b = 0.1 t v 20 85 ? 130 mv ohmic offset voltage 2) i 1 = i 1n , b = 0 t v r0 25 mv linearity of hall voltage b = 0 ? 0.5 t b = 0 ? 1 t f l 0.2 0.7 % % supply and hall-side internal resistance b = 0 t r 10, 20 900 ? 1200 w temperature coefficient of the open-circuit hall voltage i 1 = i 1n , b = 0.2 t tc v20 approx. C0.05 %/k temperature coefficient of the internal resistance b = 0.2 t tc r10, r20 0.1 ? 0.18 %/k 1) thermal conductivity chip-ambient when soldered, in still air 2) offset voltage selection upon request
data sheet 3 1999-04-01 ksy 10 open-circuit sensitivity k b0 versus temperature referred to k b0 at t a = 25 c internal resistance r 20 versus magnetic field referred to r 20 at b = 0 t and t a = 25 c internal resistance r 20 versus temperature referred to r 20 at t a = 25 c , parameter: flux density b max. permissible supply current i 1 versus temperature t a
|
